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CMOS
Contact aComp for more details, Data sheets available on request.
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MOS PROCESSES
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Name of
Technology
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Starting
parameters of 4 inch wafers
|
Min Line (m )
|
Mas-
ks
|
Me-
lay-
ers
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Electrical Parameters
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1.0 m CMOS,
5.0 V,
Double-Well,
Si-Gate, LOCOS |
P-Si
< 100>
12 W cm |
1.0 |
16 |
2 |
|
NMOS |
PMOS |
| Vt, V |
0.6-1.0 |
0.6-1.0 |
| Idsut, uA/um |
250 |
125 |
| BVDSS, V |
> 7 |
> 7 |
1.2 m CMOS,
5.0 V,
Double-Well,
Si-Gate, LOCOS |
P-Si
< 100>
12 W cm |
1.2 |
15 |
2 |
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NMOS |
PMOS |
| Vt, V |
0.6-1.0 |
0.6-1.0 |
| Idsut, uA/um |
220 |
100 |
| BVDSS, V |
> 7 |
> 7 |
1.5 m CMOS,
5.0 V,
Double-Well,
Si-Gate, LOCOS |
P-Si
< 100>
12 W cm |
1.5 |
15 |
2 |
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NMOS |
PMOS |
| Vt, V |
0.6-1.0 |
0.6-1.0 |
| Idsut, uA/um |
170 |
80 |
| BVDSS, V |
> 10 |
> 10 |
2.0 m CMOS,
5.0 V,
Double-Well,
Si-Gate, LOCOS |
P-Si < 100>
12 W cm
or N-Si < 100>
4.5 W cm |
2.0 |
14 |
2 |
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NMOS |
PMOS |
| Vt, V |
0.7-1.1 |
0.6-1.0 |
| Idsut, uA/um |
140 |
60 |
| BVDSS, V |
> 10 |
> 10 |
2.0 m CMOS,
5.0 V,
Double-Well,
Double-Si, LOCOS |
P-Si
< 100>
12 W cm |
2.0 |
14 |
1 |
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NMOS |
PMOS |
| Vt, V |
0.5-0.9 |
0.6-1.0 |
| Idsut, uA/um |
140 |
60 |
| BVDSS, V |
10-25 |
10-25 |
2.0 m NMOS,
5.0 V,
Double-Si, LOCOS |
P-Si
< 100>
12 W cm |
2.0 |
14 |
1 |
|
NMOS
normal on |
NMOS
normal
off-1 |
NMOS
normal off-2 |
| Vt, V |
0.4-0.8 |
- |
- |
| Idsut, uA/um |
100 |
400 |
925 |
| BVDSS, V |
16-25 |
- |
- |
3.0 m CMOS,
5.0 V, N-Well, Double-Si, LOCOS
(UVEPROM) |
P-Si
< 100>
12 W cm |
3.0 |
13 |
1 |
|
NMOS |
PMOS |
NMOS
mem. cell |
| Vt, V |
0.6-1.0 |
|
1.1-1.3 |
| BVDSS, V |
>15 |
>15 |
- |
4.0 m CMOS,
13 V,
-Well,
Si-Gate, LOCOS |
N-Si
< 100>
4.5 W cm |
4.0 |
12 |
1 |
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NMOS
Low voltage |
PMOS
Low voltage |
NMOS High voltage |
MOS
High voltage |
| Vt, V |
0.5-0.9 |
0.5-0.9 |
0.5-0.9 |
0.5-0.9 |
| Idsut, uA/um |
62 |
30 |
105 |
100 |
| BVDSS, V |
10-14 |
16-20 |
23-27 |
33-37 |
MOS with
Al-Gate |
N-Si
< 111>
4.5 W cm |
3.0 |
7 |
1 |
|
PMOS
Normal off |
PMOS
Normal on |
| Vt, V |
1.4-2,1 |
|
| Idsut, uA/um |
|
160 |
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3.0 m CMOS,
1.5 V, -Well
Si-Gate, LOCOS
(Low-Threshold) |
N-Si
< 100>
4.5 W cm |
3.0 |
9 |
1 |
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NMOS |
PMOS |
NMOS
Mem.cell |
| Vt, V |
0.35-0.65 |
0.35-0.65 |
0.5-0.9 |
| Idsut, uA/um |
110 |
90 |
44 |
| BVDSS, V |
> 10 |
> 10 |
> 10 |
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